{"title":"单结记忆电阻器的环面击穿","authors":"J. Ginoux, R. Meucci, S. Euzzor, A. D. Garbo","doi":"10.1142/S0218127418501286","DOIUrl":null,"url":null,"abstract":"Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called “memristor”. So, we have used the memristor's direct current (DC) current-voltage characteristic for modeling the UJT's DC current-voltage characteristic. This led us to confirm on the one hand, that the UJT is a memristor and, on the other hand to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.","PeriodicalId":194279,"journal":{"name":"2018 IEEE Workshop on Complexity in Engineering (COMPENG)","volume":"4 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Torus Breakdown in a Uni Junction Memristor\",\"authors\":\"J. Ginoux, R. Meucci, S. Euzzor, A. D. Garbo\",\"doi\":\"10.1142/S0218127418501286\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called “memristor”. So, we have used the memristor's direct current (DC) current-voltage characteristic for modeling the UJT's DC current-voltage characteristic. This led us to confirm on the one hand, that the UJT is a memristor and, on the other hand to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.\",\"PeriodicalId\":194279,\"journal\":{\"name\":\"2018 IEEE Workshop on Complexity in Engineering (COMPENG)\",\"volume\":\"4 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Workshop on Complexity in Engineering (COMPENG)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1142/S0218127418501286\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Workshop on Complexity in Engineering (COMPENG)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/S0218127418501286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called “memristor”. So, we have used the memristor's direct current (DC) current-voltage characteristic for modeling the UJT's DC current-voltage characteristic. This led us to confirm on the one hand, that the UJT is a memristor and, on the other hand to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.