单结记忆电阻器的环面击穿

J. Ginoux, R. Meucci, S. Euzzor, A. D. Garbo
{"title":"单结记忆电阻器的环面击穿","authors":"J. Ginoux, R. Meucci, S. Euzzor, A. D. Garbo","doi":"10.1142/S0218127418501286","DOIUrl":null,"url":null,"abstract":"Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called “memristor”. So, we have used the memristor's direct current (DC) current-voltage characteristic for modeling the UJT's DC current-voltage characteristic. This led us to confirm on the one hand, that the UJT is a memristor and, on the other hand to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.","PeriodicalId":194279,"journal":{"name":"2018 IEEE Workshop on Complexity in Engineering (COMPENG)","volume":"4 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Torus Breakdown in a Uni Junction Memristor\",\"authors\":\"J. Ginoux, R. Meucci, S. Euzzor, A. D. Garbo\",\"doi\":\"10.1142/S0218127418501286\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called “memristor”. So, we have used the memristor's direct current (DC) current-voltage characteristic for modeling the UJT's DC current-voltage characteristic. This led us to confirm on the one hand, that the UJT is a memristor and, on the other hand to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.\",\"PeriodicalId\":194279,\"journal\":{\"name\":\"2018 IEEE Workshop on Complexity in Engineering (COMPENG)\",\"volume\":\"4 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Workshop on Complexity in Engineering (COMPENG)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1142/S0218127418501286\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Workshop on Complexity in Engineering (COMPENG)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/S0218127418501286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

单结晶体管(UJT)的实验研究表明,这种电子元件与所谓的“忆阻器”具有相同的特性。因此,我们使用忆阻器的直流(DC)电流-电压特性来模拟UJT的直流电流-电压特性。这使我们一方面证实了UJT是一个忆阻器,另一方面提出了一个新的四维自主动力系统,允许描述实验观察到的现象,如从极限环到环面击穿的转变。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Torus Breakdown in a Uni Junction Memristor
Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called “memristor”. So, we have used the memristor's direct current (DC) current-voltage characteristic for modeling the UJT's DC current-voltage characteristic. This led us to confirm on the one hand, that the UJT is a memristor and, on the other hand to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信