多兆赫脉宽调制变换器与改进的1 /spl μ /m p通道金属氧化物半导体晶体管

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509477

T. Fowler, R. Kollman, T. Efland, D. Skelton

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引用次数: 1

摘要

脉冲宽度调制(PWM)技术被目前可用的功率开关的开关速度限制在1到2 MHz。这一限制已经被高速度(85%)和非常高的功率密度(500 W/in/sup 3/ vs最先进的100 W/in/sup 3/)所克服。

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Multi-megahertz pulse width modulation converters with improved 1 /spl mu/m p-channel metal oxide semiconductor transistors

Pulse width modulation (PWM) techniques have been limited to 1 to 2 MHz by the switching speeds of currently available power switches. This limitation has been overcome by high speed (<2 nanosecond) switching with improved 1 /spl mu/m PMOS transistors. These devices have been incorporated in a 5 MHz, PWM buck power stage that has demonstrated good efficiency (>85%) and very high power density (500 W/in/sup 3/ versus state-of-the-art 100 W/in/sup 3/).

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8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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