{"title":"镧系元素在微波器件平面工艺中的应用","authors":"D. Brinkevich, V. Prosolovich, Yu.N. Yankovski","doi":"10.1109/CRMICO.2002.1137301","DOIUrl":null,"url":null,"abstract":"It is shown that rare-earth doping of silicon can be useful in the technology of SHF-devices. The use of silicon doped by rare-earth elements (REE) as substrates for epitaxial layers allows the improvement of the stability of p-n junctions and MOS-structures to radiation effects.","PeriodicalId":378024,"journal":{"name":"12th International Conference Microwave and Telecommunication Technology","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Lanthanides application in planar technology of microwave devices production\",\"authors\":\"D. Brinkevich, V. Prosolovich, Yu.N. Yankovski\",\"doi\":\"10.1109/CRMICO.2002.1137301\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is shown that rare-earth doping of silicon can be useful in the technology of SHF-devices. The use of silicon doped by rare-earth elements (REE) as substrates for epitaxial layers allows the improvement of the stability of p-n junctions and MOS-structures to radiation effects.\",\"PeriodicalId\":378024,\"journal\":{\"name\":\"12th International Conference Microwave and Telecommunication Technology\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Conference Microwave and Telecommunication Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2002.1137301\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference Microwave and Telecommunication Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2002.1137301","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Lanthanides application in planar technology of microwave devices production
It is shown that rare-earth doping of silicon can be useful in the technology of SHF-devices. The use of silicon doped by rare-earth elements (REE) as substrates for epitaxial layers allows the improvement of the stability of p-n junctions and MOS-structures to radiation effects.
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