O和Hg原子的电子和正电子碰撞电离截面

Manish Pindariya, A. S. Chaudhari, Foram Joshi, K. N. Joshipura, H. Kothari
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引用次数: 2

摘要

计算了O和Hg原子在电子和正电子碰撞散射下的总电离截面。从复杂原子球势出发的量子力学公式适用于两个目标的散射计算。然后用变式CSP-ic法得到总电离截面和累积总激发截面。我们给出了从第一个电离阈值开始到大约2000电子伏特(eV)的冲击能量的计算结果。对于正电子-原子散射,我们的总非弹性截面包括正电子的形成以及电离和激发通道。由于Ps形成通道的存在,很难将电离截面与总的非弹性截面分开。在这方面采用了一种近似方法。关于汞原子的电子冲击的研究文献很少。同样,目前讨论的正电子碰撞电离与电子电离的关系也没有得到太多的强调。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electron and Positron Impact Ionization Cross Sections of O and Hg Atoms
Total ionization crosssections for O and Hg atoms have been calculated for electron and positron impact scattering. A quantum mechanical formulation originating from complex atomic spherical potential is adapted in the scattering calculations on two targets. Then we obtain total ionization cross sections and cumulative total excitation cross sections by applying variant CSP-ic method. Our calculated results are presented for impact energy starting from the first threshold of ionization and going up to about 2000 electron volts (eV). For positron-atom scattering, our total inelastic cross sections include positronium formation together with ionization and excitation channels. Because of Ps formation channel it is difficult to separate our ionization cross sections from the total inelastic cross sections. An approximate method has been applied in this regard. Electron impact studies on Hg atom are scarce in literature. Similarly positron impact ionization in relation to electronic ionization discussed presently has not been highlighted much.
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