M. J. Asadi, R. Jin, Z. Cao, G. Ding, V. Gholizadeh, H. F. Nied, J. Hwang, C. Goldsmith
{"title":"用于射频MEMS变容管的混合信号高压CMOS控制电路","authors":"M. J. Asadi, R. Jin, Z. Cao, G. Ding, V. Gholizadeh, H. F. Nied, J. Hwang, C. Goldsmith","doi":"10.1109/CICTA.2018.8706054","DOIUrl":null,"url":null,"abstract":"To make MEMS varactors more robust and reliable, a closed-loop control circuit was designed to sense the varactor capacitance and tune the MEMS bias in real time to adjust the capacitance to the desired value within 1 fF and in 200 $\\mu$s. The designed circuit was successfully implemented in a standard RF CMOS technology despite the challenge for handling high voltage at high speed and for suppressing the substrate-coupled noise. The fabricated chip was tested to function according to the design simulation and to be capable of switching 150 V repeatedly.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Mixed-Signal High-Voltage CMOS Control Circuit For RF MEMS Varactors\",\"authors\":\"M. J. Asadi, R. Jin, Z. Cao, G. Ding, V. Gholizadeh, H. F. Nied, J. Hwang, C. Goldsmith\",\"doi\":\"10.1109/CICTA.2018.8706054\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To make MEMS varactors more robust and reliable, a closed-loop control circuit was designed to sense the varactor capacitance and tune the MEMS bias in real time to adjust the capacitance to the desired value within 1 fF and in 200 $\\\\mu$s. The designed circuit was successfully implemented in a standard RF CMOS technology despite the challenge for handling high voltage at high speed and for suppressing the substrate-coupled noise. The fabricated chip was tested to function according to the design simulation and to be capable of switching 150 V repeatedly.\",\"PeriodicalId\":186840,\"journal\":{\"name\":\"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICTA.2018.8706054\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICTA.2018.8706054","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Mixed-Signal High-Voltage CMOS Control Circuit For RF MEMS Varactors
To make MEMS varactors more robust and reliable, a closed-loop control circuit was designed to sense the varactor capacitance and tune the MEMS bias in real time to adjust the capacitance to the desired value within 1 fF and in 200 $\mu$s. The designed circuit was successfully implemented in a standard RF CMOS technology despite the challenge for handling high voltage at high speed and for suppressing the substrate-coupled noise. The fabricated chip was tested to function according to the design simulation and to be capable of switching 150 V repeatedly.