Principle and preparation of gallium oxide photoelectric detection device

The detection of ultraviolet signal has attracted more and more attention of researchers. Gallium oxide has attracted much attention because of its particularity. In this paper, the status quo of gallium oxide was investigated, and the working principle of gallium oxide photodetector was introduced in detail. A Ga2O3 MSM UV detector with different parameters was prepared by rf magnetron sputtering and wet etching, and the optimum growth parameters were obtained, which is well prepared for the subsequent research. When the bias voltage is constant, the photoelectric characteristics of the photodetector change with the parameters.