高击穿、高线性Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As伪晶HEMT

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791688

W. Liu, W. Chang, J.Y. Chen, K. Yu, S. Feng, J. Yan

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引用次数: 0

摘要

成功制备了高击穿、高线性度的Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As伪晶hemt。采用宽间隙Ga/sub 0.51/In/sub 0.49/P肖特基接触层可获得40 V的极高门极漏击穿电压。对于1 /spl mu/m栅极长度器件，室温下的跨导和输出电流密度分别为90 mS/mm和646 mA/mm。测得的f/sub T/和f/sub max/分别为12 GHz和28.4 GHz。因此，所研究的器件在微波功率应用中具有广阔的前景。

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High-breakdown and high-linearity Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMT

High-breakdown and high-linearity Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMTs have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga/sub 0.51/In/sub 0.49/P Schottky contact layer. For a 1 /spl mu/m-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured f/sub T/ and f/sub max/ are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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