纳米尺度下的微观场效应及其对高速电子器件设计的意义

2018 IEEE Symposium on Electromagnetic Compatibility, Signal Integrity and Power Integrity (EMC, SI & PI) Pub Date : 2018-07-01 DOI:10.1109/EMCSI.2018.8495436

C. Krowne

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引用次数: 0

摘要

材料与器件-微观效应重要•相变和金属绝缘过渡材料•超导材料与器件•纳米线，纳米管和纳米电缆(1D系统)•电气材料与器件铁电(FM)， 2。反fe和电子电荷效应，如库仑堵塞•负指数材料•磁性材料与器件2.铁磁(FM);3.铁磁(FiM);抗fm和4。•单原子和少原子层状材料;例如，石墨烯，BN, MoS2 (2D系统)•拓扑绝缘体

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Microscopic Field Effects at the NanoScale Level and Their Implications for Device Design in High-Speed Electronics

Materials & Devices - Microscopic Effects Important • Phase Change & Metal-Insulation Transition Materials • Superconductive Materials & Devices • Nanowires, NanoTubes, and NanoCables (1D systems) • Electric Materials & Devices 1. Ferroelectric (FM), 2. Ant-FE, and electron charge effects like Coulomb blockage • Negative Index Materials • Magnetic Materials & Devices 1. Ferromagnetic (FM), 2. Ferrimagnetc (FiM), 3. Ant-FM and 4. Correlated electron system magnetics • Single and few atomic layered materials; e.g., graphene, BN, MoS2 (2D systems) • Topological Insulators

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2018 IEEE Symposium on Electromagnetic Compatibility, Signal Integrity and Power Integrity (EMC, SI & PI)

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