用于分析脉冲直流电迁移结果的热分析模型

P. Waltz, G. Lormand, L. Arnaud
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During DC tests, this temperature is considered being the average temperature of the line, is assumed to be constant and is calculated through resistance measurements. The problem becomes more complex when periodic currents are applied to the sample. Some authors have already faced this problem during their pulsed EM studies [2-4]. Hereafter, we develop a simple thermal model which allows us to calculate more precisely the real sample temperature in the case of unidirectional current pulses and which can be applied to bi-directional current stresses. Thermal model Our thermal model describes the sample as a first order system, which means the use of one thermal time constant [2,3]. This hypothesis has been verified via 2D simulations using a finite elements method. A purely resistive line is submitted to a periodic Joule heating. 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引用次数: 1

摘要

为了评估在脉冲电流应力下互连的实际工作温度,进行了热计算。根据应力参数:频率、占空比和电流密度,所建立的热模型很好地逼近了进行脉冲电迁移试验所需的平均温度。单电平铝铜金属化的电测量使我们能够验证模型,并指出在高频区域的一些热效应。为了利用Black s方程[1]的电迁移结果,需要了解故障地点的温度。在直流测试过程中,该温度被认为是线路的平均温度,假设是恒定的,并通过电阻测量来计算。当对样品施加周期性电流时,问题变得更加复杂。一些作者已经在他们的脉冲EM研究中遇到了这个问题[2-4]。随后,我们建立了一个简单的热模型,使我们能够更精确地计算单向电流脉冲情况下的实际样品温度,并且可以应用于双向电流应力。我们的热模型将样品描述为一阶系统,这意味着使用一个热时间常数[2,3]。这一假设已通过二维有限元模拟得到验证。将纯电阻线置于周期性焦耳加热下。功率P (t)消散在时间间隔dt等于累积热量热损失(方程1)。•P (t) dt dt (t t) dt s = +−αβ(1)Ts:衬底温度α、β:常量的力量一步峰值P0,假设方程1可以很容易地解决t = T0 t = 0:•t (t) exp () (exp(=−−−0 1βαββαt) + (P + t t)) 0(2)α是热容,1 /β热阻。因此,试样的热时间常数为τth= α/β=Cth。在下面,我们设t =0℃,DTm=P0/b。∆Tm为样品的直流焦耳加热。通过施加方形功率脉冲,样品的温度达到一个周期状态,并在一个温度区间[T1;T2]由应力条件和热时间常数定义。图1显示了稳态τth值为2时的温度与时间曲线。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal analytical model for analysis of pulsed DC electromigration results
Thermal calculations have been performed in order to evaluate the real operating temperature of an interconnection during a pulsed current stress. The developed thermal model gives a good approximation of the average temperature needed for the exploitation of pulsed electromigration tests, in function of the stress parameters : frequency, duty cycle and current density. Electrical measurements on single level AlCu metallization allowed us to verify the model and to point out some thermal effects in the high frequency region. Introduction In order to exploit electromigration results with the Black s equation [1] , the knowledge of the temperature of the failure site is needed. During DC tests, this temperature is considered being the average temperature of the line, is assumed to be constant and is calculated through resistance measurements. The problem becomes more complex when periodic currents are applied to the sample. Some authors have already faced this problem during their pulsed EM studies [2-4]. Hereafter, we develop a simple thermal model which allows us to calculate more precisely the real sample temperature in the case of unidirectional current pulses and which can be applied to bi-directional current stresses. Thermal model Our thermal model describes the sample as a first order system, which means the use of one thermal time constant [2,3]. This hypothesis has been verified via 2D simulations using a finite elements method. A purely resistive line is submitted to a periodic Joule heating. The power P(t) dissipated during the time interval dt is equal to the accumulated heat added to thermal losses (Equation 1). • P(t)dt dT (T T )dt s = + − α β (1) Ts : Substrate temperature α, β : Constants For one power step with a peak value P0, Equation 1 can easily be solved by assuming that T=T0 for t=0 : • T(t) T exp( )( exp( = − − − 0 1 β α β β α t) + ( P + T t)) 0 S (2) where α is the thermal capacitance, 1/β the thermal resistance. Thus the thermal time constant of the sample is : τth= α/β=Cth.Rth In the following, we set down Ts=0°C, DTm=P0/b. ∆Tm is then the DC Joule heating of the sample. By applying square power pulses, the temperature of the sample reaches a periodic regime and evolves in a temperature interval [T1 ; T2] defined by the stress conditions and the thermal time constant. Figure 1 shows the plot of Temperature vs Time for 2 values of τth at steady state.
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