一种利用阴极发光成像定位金属化缺陷的新方法

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 1997-07-21 DOI:10.1109/IPFA.1997.638343

X. Liu, J. Phang, D. Chan, W. Chim

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引用次数: 2

摘要

本文报道了一种利用阴极发光(CL)成像定位金属化缺陷的新概念。CL图像对比度是由于接触金属和衬底材料的光反射特性的差异，用于金属化缺陷的定位。本方法适用于具有发光钝化层和非发光衬底的器件。报道了一种具有Si/sub 3/N/sub 4/ a- sio /sub 2/钝化层的硅器件的实验研究。

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A new method for the localisation of metallization defects using cathodoluminescence imaging

We report a new concept for the localisation of metallization defects by using cathodoluminescence (CL) imaging. The CL image contrast, which is due to the difference in light reflection characteristics of the contact metal and substrate materials, is used for the localisation of metallization defects. This method is applicable to devices with a luminescent passivation layer and a non-luminescent substrate. Experimental study of a silicon device with a passivation layer of Si/sub 3/N/sub 4//a-SiO/sub 2/ is reported.

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Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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