A2RAM存储单元在SOI上的实验演示

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404392

N. Rodriguez, C. Navarro, F. Gámiz, F. Andrieu, O. Faynot, S. Cristoloveanu

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引用次数: 2

摘要

本文首次制备了A2RAM存储单元，并对其工作原理进行了实验验证。逆行P-N通道掺杂使得电子和空穴在非常薄的薄膜中分离。与逻辑晶体管集成相比，我们已经记录了在电流裕度、保持时间、可变性和细胞干扰免疫方面具有吸引力的性能，而无需任何额外的源/漏极植入优化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Experimental demonstration of A2RAM memory cell on SOI

The A2RAM memory cell has been fabricated and its operation demonstrated experimentally for the first time. The retrograde P-N channel doping allows the separation of electrons and holes in very thin films. We have documented attractive performance in terms of current margin, retention time, variability and cell disturbance immunity without any additional source/drain implantation optimization compared to logic transistor integration.

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来源期刊

2012 IEEE International SOI Conference (SOI)

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