一种用于太赫兹波段无线次谐波注入的1对4子阵列元件的设计

Meng Zhang, Peng-Yuan Wang, A. Rennings, S. Clochiatti, W. Prost, N. Weimann, D. Erni
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引用次数: 0

摘要

提出了一种用于天线中天线太赫兹振荡器无线次谐波注入(WSI)的片上1 ~ 4子阵列元件。该天线从一侧接收100 GHz的三阶次谐波注入信号(SIS),向另一侧辐射300 GHz的基频振荡信号(FOS),其工作原理类似于次谐波发射阵。每个元件由单个SIS接收天线(接收天线,RA)与$2\ × 2$ FOS阵列(发送天线,TA)连接组成。通过在单个SIS天线周围放置更多的FOS天线,将300 GHz的元件间距缩短到一个波长内,抑制了光栅瓣。通过调整FOS阵列元件的距离,也在一定程度上减小了厚磷化铟衬底中的表面波。仿真结果表明,所设计的芯片天线结构在100 GHz和300 GHz频段的最大辐射效率均优于50%。根据有源元件的要求,实现了双频段的共轭阻抗匹配。利用本文提出的天线,在周期性边界的WSI仿真中验证了低注入损耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of a 1-to-4 Subarray Element for Wireless Subharmonic Injection in the THz Band
This paper presents an on-chip 1 to 4 subarray element for wireless subharmonic injection (WSI) in the context of antenna-in-antenna THz oscillators. The proposed antenna receives the third-order subharmonic injection signal (SIS) at 100 GHz from one side and radiates the 300 GHz fundamental oscillation signal (FOS) to the opposite side, which performs like a subharmonic transmitarray. Each element is consisted of a single SIS receiving antenna (Receiver antenna, RA) connected with a $2\times 2$ FOS array (Transmitter antenna, TA). By positioning more FOS antenna around the single SIS antenna, the element spacing at 300 GHz is shorted within one wavelength which inhibits the grating lobe. Through tuning the distance of the FOS array element, the surface wave in the thick indium phosphide (InP) substrate is also reduced to some degree. The simulation results show that the maximum radiation efficiency of the designed chip antenna structure is better than 50% in both the 100 GHz and the 300 GHz band. The conjugate impedance matching in the dual-band is achieved according to the active element requirement. Utilizing the antenna proposed in this work, a low injection loss is verified in the periodical boundary based WSI simulation.
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