用于c波段DBS接收机的GaAs转换器IC

Proceedings of 1994 IEEE GaAs IC Symposium Pub Date : 1994-10-16 DOI:10.1109/GAAS.1994.636957

S. Yoshida, Kazunari Satoh, T. Miya, T. Umemoto, H. Hirayama, Katsunori Miyagaki, J. Leong

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引用次数: 2

摘要

采用0.5 /spl mu/m MESFET工艺，在1.1/spl次/1.6 mm/sup /芯片上开发了用于c波段DBS接收机的GaAs转换器IC。该转换器IC包括四(4)个功能块;即低噪声放大器(LNA)，混频器(mixer)，振荡器(OSC)和中频放大器(IFA)。该转换器IC的噪声系数为2.7 dB，转换增益为43 dB，增益分布紧密。

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GaAs converter IC's for C-band DBS receivers

GaAs converter IC's for C-band DBS receivers were developed on 1.1/spl times/1.6 mm/sup 2/ chip using a 0.5 /spl mu/m MESFET process. This converter IC includes four(4) functional blocks; i.e. low noise amplifier(LNA), mixer(MIXER), oscillator(OSC) and IF amplifier(IFA). This converter IC has 2.7 dB noise figure and 43 dB conversion gain, and shows a tight gain distribution.

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Proceedings of 1994 IEEE GaAs IC Symposium

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