利用自主研制的宽带太赫兹- tds系统研究了纯gase和掺杂gase晶体的介电响应

A. Das, S. Bhattacharya, K. Mandal, S. Mondal, Mukesh Jewariya, T. Ozaki, S. Bhaktha, P. Datta
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引用次数: 0

摘要

发布者注:本文最初发表于2016年7月12日,已于2016年7月26日被更正/修订版本所取代。如果您下载了原始PDF,但无法访问修订版本,请联系SPIE数字图书馆客户服务中心寻求帮助。我们研制了一种太赫兹时域光谱系统(THz TDS)。对于太赫兹的产生,光学整流过程和检测,使用电光采样过程。相同的< 110 >切割ZnTe晶体用于太赫兹辐射的产生和检测。该光谱系统可用于各种样品的非侵入性和非接触式电学和光学表征。在这项工作中,利用开发的装置在0.4太赫兹到3太赫兹范围内对纯、铬和铟掺杂的GaSe晶体进行了光谱测量,以研究样品的介电响应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dielectric response of pure and doped-GaSe crystals studied by an indigenously developed broadband THz-TDS system
Publisher’s Note: This paper, originally published on 12 July 2016, was replaced with a corrected/revised version on 26 July 2016. If you downloaded the original PDF but are unable to access the revision, please contact SPIE Digital Library Customer Service for assistance. We have developed a terahertz time domain spectroscopy system (THz TDS). For THz generation, optical rectification process and for detection, electro-optic sampling processes are used. Identical < 110 > cut ZnTe crystals are used for both generation and detection of THz radiation.This spectroscopy system can be used for the noninvasive and contactless electrical and optical characterizations of various samples. In this work spectroscopic measurements of pure, Chromium and Indium doped GaSe crystals within 0.4 THz to 3 THz range are taken by the developed set-up to study the dielectric response of the samples.
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