多指SiGe hbt建模及大信号模型性能误差度量

2006 International Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits Pub Date : 1900-01-01 DOI:10.1109/INMMIC.2006.283512

Iltcho Angelovl, A. Samelis, M. Fernández-Barciela, Tino Mojon

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引用次数: 3

摘要

提出了一种紧凑的多指SiGe hbt大信号模型，并进行了实验验证。该模型的建立简化了参数提取过程。以商业工艺技术制造的多指SiGe HBT进行了模型开发。它由72个手指组成，每个手指都有一个绘制的发射器几何形状为2times20times0.5 mum2。结果表明，直流、s参数和LS特性的测量值与模拟值吻合良好

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Modeling of Multi-Finger SiGe HBTs and the Error Metrics of the Large Signal Model Performances

A compact large-signal model for multi-finger SiGe HBTs is proposed and experimentally validated. The model formulation leads to a simple parameter extraction procedure. Model development was carried out for a multi-finger SiGe HBT fabricated in a commercial process technology. It consisted of 72 fingers each with a drawn emitter geometry of 2times20times0.5 mum2. Results show good fit between measured and simulated DC, S-parameter and LS characteristics

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来源期刊

2006 International Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits

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