半通量量子电路中Nb四层结构的磁约瑟夫森结

Daiki Hasegawa, Yuto Takeshita, K. Sano, Masamitsu Tanaka, A. Fujimaki, T. Yamashita
{"title":"半通量量子电路中Nb四层结构的磁约瑟夫森结","authors":"Daiki Hasegawa, Yuto Takeshita, K. Sano, Masamitsu Tanaka, A. Fujimaki, T. Yamashita","doi":"10.1109/ISEC46533.2019.8990908","DOIUrl":null,"url":null,"abstract":"We successfully fabricated magnetic Josephson junctions integrated on a Nb four-layer superconducting structure for demonstrating half flux quantum (HFQ) circuits. In the developed process, we adopted a $0-0-\\pi$ SQUID instead of the $0-\\pi$ SQUID as the basic element of the HFQ circuits. In this work, we characterized the Nb/PdNi/Nb magnetic Josephson junctions on the Nb four-layer structures fabricated by two different processes. We measured the I-V characteristics of junctions in liquid helium at 4.2 K. The results showed that the fabricated junctions had properties comparable to conventional ones on Si wafers.","PeriodicalId":250606,"journal":{"name":"2019 IEEE International Superconductive Electronics Conference (ISEC)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Magnetic Josephson Junctions on Nb Four-layer Structure for Half Flux Quantum Circuits\",\"authors\":\"Daiki Hasegawa, Yuto Takeshita, K. Sano, Masamitsu Tanaka, A. Fujimaki, T. Yamashita\",\"doi\":\"10.1109/ISEC46533.2019.8990908\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We successfully fabricated magnetic Josephson junctions integrated on a Nb four-layer superconducting structure for demonstrating half flux quantum (HFQ) circuits. In the developed process, we adopted a $0-0-\\\\pi$ SQUID instead of the $0-\\\\pi$ SQUID as the basic element of the HFQ circuits. In this work, we characterized the Nb/PdNi/Nb magnetic Josephson junctions on the Nb four-layer structures fabricated by two different processes. We measured the I-V characteristics of junctions in liquid helium at 4.2 K. The results showed that the fabricated junctions had properties comparable to conventional ones on Si wafers.\",\"PeriodicalId\":250606,\"journal\":{\"name\":\"2019 IEEE International Superconductive Electronics Conference (ISEC)\",\"volume\":\"94 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE International Superconductive Electronics Conference (ISEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISEC46533.2019.8990908\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Superconductive Electronics Conference (ISEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEC46533.2019.8990908","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

我们成功地制作了集成在Nb四层超导结构上的磁性约瑟夫森结,用于演示半通量量子(HFQ)电路。在开发过程中,我们采用$0-0-\pi$ SQUID代替$0-\pi$ SQUID作为HFQ电路的基本元件。在这项工作中,我们在两种不同工艺制备的Nb四层结构上表征了Nb/PdNi/Nb磁性约瑟夫森结。我们测量了液氦中结在4.2 K时的I-V特性。结果表明,所制备的结具有与硅晶片上的传统结相当的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Magnetic Josephson Junctions on Nb Four-layer Structure for Half Flux Quantum Circuits
We successfully fabricated magnetic Josephson junctions integrated on a Nb four-layer superconducting structure for demonstrating half flux quantum (HFQ) circuits. In the developed process, we adopted a $0-0-\pi$ SQUID instead of the $0-\pi$ SQUID as the basic element of the HFQ circuits. In this work, we characterized the Nb/PdNi/Nb magnetic Josephson junctions on the Nb four-layer structures fabricated by two different processes. We measured the I-V characteristics of junctions in liquid helium at 4.2 K. The results showed that the fabricated junctions had properties comparable to conventional ones on Si wafers.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信