2.5 kV-1000 A电源组IGBT(大功率平板封装RC-IGBT)

Y. Takahashi, K. Yoshikawa, M. Soutome, T. Fujii, M. Ichijyou, Y. Seki
{"title":"2.5 kV-1000 A电源组IGBT(大功率平板封装RC-IGBT)","authors":"Y. Takahashi, K. Yoshikawa, M. Soutome, T. Fujii, M. Ichijyou, Y. Seki","doi":"10.1109/ISPSD.1996.509502","DOIUrl":null,"url":null,"abstract":"A 2.5 kV-1000 A Power Pack IGBT has been successfully developed. This Power Pack IGBT is specially designed for the high power and highly reliable industrial and traction use. Compared with conventional IGBT modules, this Power Pack IGBT is simple and compact for a 2.5 kV-1 kA class device because the assembled IGBT and PWD chips are able to shrink due to the low thermal impedance of both side cooling. The Power Pack IGBT shows the high blocking voltage of 2.5 kV, the maximum on-state voltage of 4.5 V at the collector current I/sub c/=1000 A, T/sub j/=125/spl deg/C, and the turn-off capability of over 5/spl times/I/sub c/.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"87 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"2.5 kV-1000 A power pack IGBT (high power flat-packaged RC-IGBT)\",\"authors\":\"Y. Takahashi, K. Yoshikawa, M. Soutome, T. Fujii, M. Ichijyou, Y. Seki\",\"doi\":\"10.1109/ISPSD.1996.509502\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 2.5 kV-1000 A Power Pack IGBT has been successfully developed. This Power Pack IGBT is specially designed for the high power and highly reliable industrial and traction use. Compared with conventional IGBT modules, this Power Pack IGBT is simple and compact for a 2.5 kV-1 kA class device because the assembled IGBT and PWD chips are able to shrink due to the low thermal impedance of both side cooling. The Power Pack IGBT shows the high blocking voltage of 2.5 kV, the maximum on-state voltage of 4.5 V at the collector current I/sub c/=1000 A, T/sub j/=125/spl deg/C, and the turn-off capability of over 5/spl times/I/sub c/.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"87 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509502\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509502","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

摘要

2.5 kV-1000 A功率包IGBT已成功开发。该电源包IGBT是专为大功率和高可靠的工业和牵引使用。与传统的IGBT模块相比,这款Power Pack IGBT简单紧凑,适用于2.5 kV-1 kA级器件,因为组装的IGBT和PWD芯片能够由于两侧冷却的低热阻抗而缩小。Power Pack IGBT在集电极电流I/sub c/=1000 A, T/sub j/=125/spl度/ c时具有2.5 kV的高阻断电压,4.5 V的最大导通电压和超过5/spl次/I/sub c/的关断能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
2.5 kV-1000 A power pack IGBT (high power flat-packaged RC-IGBT)
A 2.5 kV-1000 A Power Pack IGBT has been successfully developed. This Power Pack IGBT is specially designed for the high power and highly reliable industrial and traction use. Compared with conventional IGBT modules, this Power Pack IGBT is simple and compact for a 2.5 kV-1 kA class device because the assembled IGBT and PWD chips are able to shrink due to the low thermal impedance of both side cooling. The Power Pack IGBT shows the high blocking voltage of 2.5 kV, the maximum on-state voltage of 4.5 V at the collector current I/sub c/=1000 A, T/sub j/=125/spl deg/C, and the turn-off capability of over 5/spl times/I/sub c/.
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