Dong-hwan Kim, Aesun Oh, Eunyoung Park, Kyung-Hyun Kim, Sung-Jae Jeon, Hyun-Cheol Bae
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A total of 100 cycles were carried out, and Trr and RDS(on) were measured every 50 cycles to assess the electrical characteristics. The thermal analysis of the maximum temperature difference between the substrates, bonding materials, and interconnections was performed by adding a Cu clip bonding. The electrical properties were measured during the thermal cycling. all samples performed better than the 1700V/58A SiC MOSFET datasheet and operated normally after 100 cycles. Additionally, the maximum temperature difference between the Al wire and Cu clip bonding was not significant in the standard TO-247 module. 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引用次数: 3
摘要
本研究采用1700V/58A SiC MOSFET代替现有的Si to -247模块作为to -247模块,分析大功率模块的热电特性。to -247模块用于测量热循环测试(- 40至125°C)下的电气特性。采用标准的TO-247衬底、高导热系数的AlN DBC和高机械性能的Si3N4 AMB作为衬底。采用传统焊料基的PbSn预制体和高可靠的银烧结浆料作为粘结材料。为了实现互连,TO-247模块采用了模块中最常用的线键合和异质键合材料连接的Cu夹。共进行100次循环,每50次循环测量Trr和RDS(on),以评估电特性。通过添加铜夹键合,对衬底、键合材料和互连之间的最大温差进行了热分析。在热循环过程中测量了电学性能。所有样品的性能都优于1700V/58A SiC MOSFET数据表,并且在100次循环后正常工作。此外,在标准的TO-247模块中,Al线和Cu夹接之间的最大温差并不显著。然而,当使用导热系数低的衬底产生高热量时,使用铜夹键合更有效地降低温度。
Thermal and electrical reliability analysis of TO-247 for bonding method, substrate structure and heat dissipation bonding material
In this study, a 1700V/58A SiC MOSFET was used as the TO-247 module instead of the existing Si TO-247 module to analyze the thermal and electrical characteristics of a high-power module. The TO-247 module was manufactured to measure the electrical characteristics under thermal cycle testing (−40 to 125°C). The substrates used in the fabrication were standard TO-247 substrates, AlN DBC with high thermal conductivity, and Si3N4 AMB with high mechanical properties. The PbSn preform of the conventional solder base and a highly reliable Ag sintering paste were used as the bonding materials. For interconnection, wire bonding, which is most used in modules, and Cu clips attached using heterogeneous bonding materials were used in the TO-247 module. A total of 100 cycles were carried out, and Trr and RDS(on) were measured every 50 cycles to assess the electrical characteristics. The thermal analysis of the maximum temperature difference between the substrates, bonding materials, and interconnections was performed by adding a Cu clip bonding. The electrical properties were measured during the thermal cycling. all samples performed better than the 1700V/58A SiC MOSFET datasheet and operated normally after 100 cycles. Additionally, the maximum temperature difference between the Al wire and Cu clip bonding was not significant in the standard TO-247 module. However, using Cu clip bonding is more effective in reducing temperature when high heat is generated using substrates with low thermal conductivity.