F. Su, G. Sharma, F. Blanchard, L. Razzari, A. Ayesheshim, R. Morandotti, T. Ozaki, F. Hegmann
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Nonlinear free-carrier velocity induced by intense terahertz pulse in photoexcited semiconductor materials
The transient absorption bleaching and velocity overshoot of photoexcited carriers in GaAs and Si have been observed by the intense few-circle terahertz (THz) probe pulse in the optical pump-terahertz probe (OPTP) configuration. The free-carrier THz nonlinearity is attributed to the transient electron redistribution in conduction band induced by the strong THz electric field component.
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