Wenqiang Luo, X. Wu, Fang-Yuan Yuan, Huaqiang Wu, L. Pan, Ning Deng
{"title":"基于Ag/PEDOT:PSS/Ta记忆电阻器的突触学习行为","authors":"Wenqiang Luo, X. Wu, Fang-Yuan Yuan, Huaqiang Wu, L. Pan, Ning Deng","doi":"10.1109/ISNE.2016.7543280","DOIUrl":null,"url":null,"abstract":"In this paper, a memristor with structure of Ag/ PEDOT:PSS/ Ta was fabricated and measured at room temperature. The conductance of the device decreased continuously as the consecutive negative voltage scanning. But for positive voltage sweeping, the conductance value reduced initially then increased, which was quite different from previous reported experimental results. The relaxation phenomenon was observed under the consecutive voltage pulses, which can be used to achieve a synaptic learning behavior. It is found that the PEDOT:PSS layer was critical for the special characteristics.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Synaptic learning behavior based on a Ag/PEDOT:PSS/Ta memristor\",\"authors\":\"Wenqiang Luo, X. Wu, Fang-Yuan Yuan, Huaqiang Wu, L. Pan, Ning Deng\",\"doi\":\"10.1109/ISNE.2016.7543280\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a memristor with structure of Ag/ PEDOT:PSS/ Ta was fabricated and measured at room temperature. The conductance of the device decreased continuously as the consecutive negative voltage scanning. But for positive voltage sweeping, the conductance value reduced initially then increased, which was quite different from previous reported experimental results. The relaxation phenomenon was observed under the consecutive voltage pulses, which can be used to achieve a synaptic learning behavior. It is found that the PEDOT:PSS layer was critical for the special characteristics.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543280\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543280","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Synaptic learning behavior based on a Ag/PEDOT:PSS/Ta memristor
In this paper, a memristor with structure of Ag/ PEDOT:PSS/ Ta was fabricated and measured at room temperature. The conductance of the device decreased continuously as the consecutive negative voltage scanning. But for positive voltage sweeping, the conductance value reduced initially then increased, which was quite different from previous reported experimental results. The relaxation phenomenon was observed under the consecutive voltage pulses, which can be used to achieve a synaptic learning behavior. It is found that the PEDOT:PSS layer was critical for the special characteristics.