{"title":"直接转换I-Q发射器前端180ghz与80ghz带宽在130nm SiGe","authors":"Paul Stärke, Xin Xu, C. Carta, F. Ellinger","doi":"10.1109/ESSCIRC.2019.8902879","DOIUrl":null,"url":null,"abstract":"This work presents an integrated mm-wave transmitter front-end with independent in-phase and quadrature paths for carrier frequencies around 180 GHz. The up-conversion units consist of a double-balanced active mixer with baseband (IF) buffer, local oscillator (LO) driver and RF power amplifier (PA). A passive 90° hybrid generates the quadrature LO signal and a power combiner joins the PA outputs. The IF-to-RF conversion gain is 10 dB, with an RF bandwidth of 80 GHz. The design supports binary and higher order modulation schemes and exhibits an IF input referred 1-dB compression point of −11 dBm. The saturated output power is 3.5 dBm per path and an LO level of −5 dBm is sufficient for an optimal operation. The total power consumption is 151 mW per path. The final chip occupies an area of 1.4 mm2 and is fabricated in a 130 nm SiGe BiCMOS process with a maximum oscillation frequency of 450 GHz. The main application of this circuit is ultra-wideband short-range communication with data rates beyond 100 Gbit/s.","PeriodicalId":402948,"journal":{"name":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Direct-Conversion I-Q Transmitter Front-End for 180 GHz with 80 GHz Bandwidth in 130 nm SiGe\",\"authors\":\"Paul Stärke, Xin Xu, C. Carta, F. Ellinger\",\"doi\":\"10.1109/ESSCIRC.2019.8902879\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents an integrated mm-wave transmitter front-end with independent in-phase and quadrature paths for carrier frequencies around 180 GHz. The up-conversion units consist of a double-balanced active mixer with baseband (IF) buffer, local oscillator (LO) driver and RF power amplifier (PA). A passive 90° hybrid generates the quadrature LO signal and a power combiner joins the PA outputs. The IF-to-RF conversion gain is 10 dB, with an RF bandwidth of 80 GHz. The design supports binary and higher order modulation schemes and exhibits an IF input referred 1-dB compression point of −11 dBm. The saturated output power is 3.5 dBm per path and an LO level of −5 dBm is sufficient for an optimal operation. The total power consumption is 151 mW per path. The final chip occupies an area of 1.4 mm2 and is fabricated in a 130 nm SiGe BiCMOS process with a maximum oscillation frequency of 450 GHz. The main application of this circuit is ultra-wideband short-range communication with data rates beyond 100 Gbit/s.\",\"PeriodicalId\":402948,\"journal\":{\"name\":\"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2019.8902879\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2019.8902879","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Direct-Conversion I-Q Transmitter Front-End for 180 GHz with 80 GHz Bandwidth in 130 nm SiGe
This work presents an integrated mm-wave transmitter front-end with independent in-phase and quadrature paths for carrier frequencies around 180 GHz. The up-conversion units consist of a double-balanced active mixer with baseband (IF) buffer, local oscillator (LO) driver and RF power amplifier (PA). A passive 90° hybrid generates the quadrature LO signal and a power combiner joins the PA outputs. The IF-to-RF conversion gain is 10 dB, with an RF bandwidth of 80 GHz. The design supports binary and higher order modulation schemes and exhibits an IF input referred 1-dB compression point of −11 dBm. The saturated output power is 3.5 dBm per path and an LO level of −5 dBm is sufficient for an optimal operation. The total power consumption is 151 mW per path. The final chip occupies an area of 1.4 mm2 and is fabricated in a 130 nm SiGe BiCMOS process with a maximum oscillation frequency of 450 GHz. The main application of this circuit is ultra-wideband short-range communication with data rates beyond 100 Gbit/s.