利用多层石墨烯层间隧道场效应晶体管中的多个隧道势垒增强共振

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI:10.1109/SISPAD.2018.8551642

N. Prasad, S. Banerjee, L. Register

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引用次数: 1

摘要

层间隧道场效应晶体管(itfet)利用两层二维半导体之间的共振隧道来产生负差分电阻。窄谐振允许在潜在的电路应用中降低工作电压。当器件尺寸缩小时，研究了使用多个隧道势垒作为获得窄共振的手段。具体来说，我们分析了一个基于石墨烯的双层ITFET系统。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Enhancement of Resonance by the Use of Multiple Tunnel Barriers in Bilayer Graphene-Based Interlayer Tunnel Field Effect Transistors

Interlayer tunnel field effect transistors (ITFETs) make use of resonant tunneling between two layers of two-dimensional semiconductors to create a negative differential resistance. A narrow resonance allows for lowering the operating voltages in potential circuit applications. The use of multiple tunnel barriers is investigated as a means to obtain a narrow resonance, as the device dimensions are scaled down. For specificity, we analyze a bilayer graphene-based ITFET system.

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2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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