采用0.1 μm GaAs pHEMT工艺的5G相控阵应用的37-40 GHz功率放大器

2017 IEEE 7th International Conference on Consumer Electronics - Berlin (ICCE-Berlin) Pub Date : 2017-09-01 DOI:10.1109/ICCE-Berlin.2017.8210597

Jeng‐Han Tsai, Y. Cheng, Chuan-Chi Hung, Kun-Chan Chiang, Wei-Teung Li

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引用次数: 6

摘要

采用0.1 μm GaAs pHEMT工艺设计制作了37 ~ 40ghz功率放大器(PA)。利用双向直接并联功率组合和低阻抗传输线预匹配技术，PA在38 GHz下实现了25.6 dBm的测量饱和输出功率，峰值功率附加效率(PAE)为28%。测量的输出1db增益压缩点为24.6 dBm，峰值增益为13.5 dB。芯片尺寸为2.03 × 1.03 mm2。

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A 37–40 GHz power amplifier for 5G phased array applications using 0.1-μm GaAs pHEMT process

A 37–40 GHz power amplifier (PA) has been designed and fabricated on 0.1-μm GaAs pHEMT process. Utilizing two-way direct shunt power combining and low impedance transmission line pre-matching technique, the PA achieves measured saturation output power of 25.6 dBm with peak power added efficiency (PAE) of 28% at 38 GHz. The measured output 1-dB gain compression point is 24.6 dBm and the peak gain is 13.5 dB. The chip size is 2.03 × 1.03 mm2.

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2017 IEEE 7th International Conference on Consumer Electronics - Berlin (ICCE-Berlin)

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