负体差电导率半导体的稳态

M. Kagan, S. Kalashnikov, N. Zhdanova
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引用次数: 10

摘要

在“相平面”上分析了描述负体差电导率半导体稳态的非线性方程组。负微分电导率被认为是由电子浓度的场依赖性(由于重组过程)或迁移率的场依赖性引起的。磁场沿试样可能的空间变化呈阶梯状,对应于饱和电流的两个不同值。实验研究了含部分补偿铜的n型锗样品的电流-电压特性和场分布。发现饱和电流对应于空间均匀样品的电流场曲线的峰值。低场区和高场区的电场以及这些区域在样品中的位置与理论一致。[忽略俄语文本]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Stationary State of a Semiconductor with Negative Bulk Differential Conductivity
The system of nonlinear equations describing the stationary state of a semiconductor with negative bulk differential conductivity is analysed in the “phase plane”. The negative differential conductivity is considered to arise from either the field dependence of the electron concentration (due to the recombination process) or the field dependence of the mobility. Possible spatial variations of the field along the sample have a step-like form and correspond to two different values of the saturation current. The current-voltage characteristics and the field distributions are studied experimentally in n-type germanium samples containing partly compensated copper. It is found that the saturation current corresponds to the peak of the current-field curve of a spatially homogeneous sample. The electric field in the low and high field regions, as well as the location of these regions in the sample, are found to be in satisfactory agreement with theory. [Russian Text Ignored].
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