Design of First Order Active Low Pass Filter using 22nm Gate All Around Silicon-on-Insulator Schottky Barrier MOSFET

The analog/RF parameter analysis is performed for 22nm gate all around silicon-on-insulator schottky barrier (SOISB) MOSFET for circuit applications. The small-signal model parameters are extracted for SOISB MOSFET. A first-order active low pass filter using three SOISB MOSFETs is proposed in this work. NMOS SOISB MOSFET is used as a resistor with a grounded capacitor for performing filtering action. For amplification of filtered signal CMOS SOISB MOSFET amplifier is used in the output stage. Further gain and phase analysis of the low pass filter circuit is performed with cut-off frequency.