平面电路中毫米波二极管的大信号建模

1987 Twelth International Conference on Infrared and Millimeter Waves Pub Date : 1987-12-01 DOI:10.1109/irmm.1987.9126880

D. Singh, C. Seashore, M. Gawronski

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引用次数: 0

摘要

本文描述了一种简单、准确的实验技术，用于平面微带电路在大信号条件下测定毫米波(30-100 GHz) GaAs和InP Gunn二极管等效电路参数。该模型的建立使微带振荡器和压控振荡器的测量性能与计算性能非常吻合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Large signal modeling of millimeter wave gunn diodes for planar circuits

A simple and accurate experimental technique is described to determine the equivalent circuit parameters of millimeter wave (30–100 GHz) GaAs and InP Gunn diodes under large signal conditions for a planar microstrip circuit. The modeling has resulted in the development of microstrip oscillators and VCOs with excellent agreement between measured and calculated performance.

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来源期刊

1987 Twelth International Conference on Infrared and Millimeter Waves

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