在相变存储器中减少读访问的写阻塞

Jianhui Yue, Yifeng Zhu
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引用次数: 20

摘要

相变存储器(PCM)具有非易失性、可扩展的位密度和快速读取性能,是DRAM的一个很有前途的替代品或补充。然而,PCM有两个严重的挑战,包括非常慢的写入速度和不太理想的写入持久性。虽然近年来的研究已经显著提高了PCM的写入持久性,但写入速度慢的问题却越来越突出,阻碍了PCM在实际系统中的广泛应用。为了提高写入速度,本文提出了一种新的内存微架构,称为并行芯片PCM(PC2M),它利用内存访问的空间局部性,并将银行级并行性转换为更大的芯片级并行性。我们还提出了一种微写方案,以减少不间断串行写所造成的读访问阻塞。微写将一个大的写操作分解成多个小的写操作,并在小的写操作完成后立即及时调度新到达的读操作。我们的设计与许多现有的PCM写入隐藏技术是正交的,因此可以用于进一步优化PCM性能。基于多核处理器在SPEC CPU 2006多程序工作负载下的仿真实验,我们提出的技术可以将标准PCM的内存延迟降低68.5%,平均提高系统性能30.3%。PC2M和微写显著优于现有的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Making Write Less Blocking for Read Accesses in Phase Change Memory
Phase-change Memory (PCM) is a promising alternative or complement to DRAM for its non-volatility, scalable bit density, and fast read performance. Nevertheless, PCM has two serious challenges including extraordinarily slow write speed and less-than-desirable write endurance. While recent research has improved the write endurance significantly, slow write speed become a more prominent issue and prevents PCM from being widely used in real systems. To improve write speed, this paper proposes a new memory micro-architecture, called Parallel Chip PCM(PC2M), which leverages the spatial locality of memory accesses and trades bank-level parallelism for larger chip-level parallelism. We also present a micro-write scheme to reduce the blocking for read accesses caused by uninterrupted serialized writes. Micro-write breaks a large write into multiple smaller writes and timely schedules newly arriving reads immediately after a small write completes. Our design is orthogonal to many existing PCM write hiding techniques, and thus can be used to further optimize PCM performance. Based on simulation experiments of a multi-core processor under SPEC CPU 2006 multi-programmed workloads, our proposed techniques can reduce the memory latency of standard PCM by 68.5% and improve the system performance by 30.3% on average. PC2M and Micro-write significantly outperform existing approaches.
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