epsilon -近零电吸收的高速等离子体导电氧化硅调制器

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8925653

Bokun Zhou, Erwen Li, Yunfei Bo, Alan X. Wang

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引用次数: 1

摘要

我们设计并演示了一种利用epsilon近零电吸收的高速等离子体导电氧化硅调制器，实现了3.5GHz的调制带宽和4.5Gb/s的数据速率。电吸收调制器覆盖了从1515nm到1580nm波长的整个c波段。

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High-Speed Plasmonic-Conductive Oxide-Silicon Modulator by Epsilon-Near-Zero Electro-Absorption

We designed and demonstrated a high-speed plasmonic-conductive oxide-silicon modulator using epsilon-near-zero electro-absorption, achieving modulation bandwidth of 3.5GHz and 4.5Gb/s data rate. The electro-absorption modulator covers the entire C-band from 1515 nm to 1580 nm wavelength.

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2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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