室温下光泵浦CdxHg1−xTe结构的受激辐射

A. Andronov, Y. Nozdrin, A. V. Okomel’kov, A. Babenko, V. Varavin, D. Ikusov, R. N. Smirnov
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引用次数: 3

摘要

报道了光抽运CdxHg1-xTe结构在1.4 ~ 4.5 μ m波长范围内受激辐射的实验观察。实验采用分子束外延在GaAs和Si衬底上生长的CdxHg1-xTe梯度隙样品。在波长为1.064 μ m的Nd:YAG激光脉冲泵浦下,在77 ~ 300 K的温度下观察到这种结构的超发光。在室温下,观察到波长为1.4 ~ 1.7 μ m的受激辐射。本文获得的实验数据是首次在室温下观察到Si和GaAs衬底上CdxHg1-xTe结构在这些波长下的受激辐射。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Stimulated radiation of optically pumped CdxHg1−xTe structures at room temperature
The experimental observation of stimulated radiation of optically pumped CdxHg1-xTe structures in the wavelength range of 1.4 - 4.5 mum is reported. In the experiments, graded-gap CdxHg1-xTe samples grown on GaAs and Si substrates by molecular beam epitaxy were used. Superluminescence of such structures was observed at 77 - 300 K under the pulsed pumping of the samples by a Nd:YAG laser at a wavelength of 1.064 mum. At room temperature, stimulated radiation was observed at wavelength of 1.4 - 1.7 mum. The obtained experimental data are the first results on the observation of stimulated radiation from graded-gap CdxHg1-xTe structures on Si and GaAs substrates at these wavelengths at room temperature.
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