不同AlGaAs间隔层厚度的GaAs/AlGaAs调制掺杂结构的太赫兹辐射磁场取向依赖性

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference Pub Date : 2006-05-21 DOI:10.1109/CLEO.2006.4628602

E. Estacio, C. Ponseca, A. Quema, G. Diwa, H. Murukami, S. Ono, A. Somintac, Michelle Bailon, A. Salvador, Nobuhiko Sarukura

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摘要

研究了不同间隔层厚度的GaAs/AlGaAs调制掺杂结构的太赫兹辐射强度与磁场取向的关系。结果在结电场、载流子迁移率和界面粗糙度的背景下进行了分析。

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Magnetic field orientation dependence of the terahertz radiation from GaAs/AlGaAs modulation-doped structures with varying AlGaAs spacer-layer thickness

The magnetic field orientation dependence of the terahertz radiation intensity from GaAs/AlGaAs modulation-doped structures with varying spacer thickness was investigated. Results are analyzed in the context of junction electric field, carrier mobility, and interface roughness.

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来源期刊

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference

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