利用忆阻器通过材料隐含实现组合电路

Anindita Chakraborty, H. Rahaman
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引用次数: 12

摘要

忆阻器是一种新型的纳米电子器件,近年来因其无易失性、更好的排列性和优异的可扩展性而受到广泛欢迎。利用这种纳米器件设计逻辑电路、数字存储器和神经形态系统的研究工作正在进行。出于设计目的,采用了纯方法和混合方法。物质蕴涵逻辑为逻辑设计领域探索忆阻器带来了动力。在这项工作中,物质蕴涵逻辑已被应用于设计复杂的组合电路,如解复用器、编码器、优先编码器、解码器和使用忆阻器的幅度比较器。串行和并行方法都被用于设计目的,并行实现比串行实现需要更少的步数。此外,所提出的设计占用比传统cmos同行更小的面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Implementation of combinational circuits via material implication using memristors
Memristor is a new nanoelectronic device that has become very popular at recent times for its non-volatility, better alignment and excellent scalability properties. Various research works are going on designing of logic circuits, digital memory and neuromorphic systems using this nano device. Both pure and hybrid approaches are followed for the design purpose. Material implication logic brings in the motivation for exploring memristors in the area of logic design. In this work material implication logic has been applied to design complex combinational circuits like demultiplexer, encoder, priority encoder, decoder and magnitude comparator using memristors. Both serial and parallel approaches have been used for the design purpose and the parallel implementations require lesser step counts than their serial counterparts. Also the designs presented occupy lesser area than their conventional CMOS-peers.
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