兰格耦合器在片上噪声参数测量验证中的新应用

1994 24th European Microwave Conference Pub Date : 1994-10-01 DOI:10.1109/EUMA.1994.337407

A. Boudiaf, Chantal Dubon-Chevalliewr, D. Pasquet

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引用次数: 0

摘要

利用薄膜技术，我们设计并制造了一种新的无源器件，用于晶圆上噪声参数的测量验证。该器件的主要特点是输入输出反射系数和噪声参数与低噪声场效应晶体管具有相同的数量级。这种新器件是理想的验证标准，由于其小尺寸和宽操作带宽，适用于晶圆上测量。

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A New Application of A Lange Coupler For On-Wafer Noise Parameter Measurement Verification

Using a thin film technology, we have designed and fabricated a new passive device for on-wafer noise parameter measurement verification. The main feature specifying this device is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low noise field effect transistors. This new device is ideal as a verification standard, suited for on-wafer measurements due to its small size and wide operation bandwidth.

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1994 24th European Microwave Conference

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