{"title":"一种新的全差分第二代电流控制传输或使用FG-MOS","authors":"R. Fani, E. Farshidi","doi":"10.1109/IRANIANCEE.2012.6292314","DOIUrl":null,"url":null,"abstract":"This paper presents a new fully differential current controlled conveyor (FDCCCII) based on differential pair topology, which employs floating gate MOS transistors (FG-MOS). It uses floating gate MOSFETs at the input stage and has rail to rail structure. It operates with low supply voltage (±0.8v), low power consumption (lower than 600μw), and with wide range parasitic resistance (Rx). Simulation results by Hspice confirm validity of the proposed circuit.","PeriodicalId":308726,"journal":{"name":"20th Iranian Conference on Electrical Engineering (ICEE2012)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A new fully differential second generation current controlled convey or using FG-MOS\",\"authors\":\"R. Fani, E. Farshidi\",\"doi\":\"10.1109/IRANIANCEE.2012.6292314\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a new fully differential current controlled conveyor (FDCCCII) based on differential pair topology, which employs floating gate MOS transistors (FG-MOS). It uses floating gate MOSFETs at the input stage and has rail to rail structure. It operates with low supply voltage (±0.8v), low power consumption (lower than 600μw), and with wide range parasitic resistance (Rx). Simulation results by Hspice confirm validity of the proposed circuit.\",\"PeriodicalId\":308726,\"journal\":{\"name\":\"20th Iranian Conference on Electrical Engineering (ICEE2012)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"20th Iranian Conference on Electrical Engineering (ICEE2012)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRANIANCEE.2012.6292314\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"20th Iranian Conference on Electrical Engineering (ICEE2012)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRANIANCEE.2012.6292314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new fully differential second generation current controlled convey or using FG-MOS
This paper presents a new fully differential current controlled conveyor (FDCCCII) based on differential pair topology, which employs floating gate MOS transistors (FG-MOS). It uses floating gate MOSFETs at the input stage and has rail to rail structure. It operates with low supply voltage (±0.8v), low power consumption (lower than 600μw), and with wide range parasitic resistance (Rx). Simulation results by Hspice confirm validity of the proposed circuit.