Chun-Chieh Lin, Chang-Chih Chung, Kuan-Jhih Hou, T. Tseng
{"title":"铁离子掺入改善鸭蛋基阻性开关存储器蛋白的性能","authors":"Chun-Chieh Lin, Chang-Chih Chung, Kuan-Jhih Hou, T. Tseng","doi":"10.1109/ISNE.2016.7543291","DOIUrl":null,"url":null,"abstract":"Albumen of duck egg based, an environmentally friendly material, resistive switching memory is proposed in this work. The resistive switching properties of the device are improved by doping with Fe ions. The non-volatility of the device is demonstrated. A possible resistive switching filamentary model is proposed. The proposed memory device is possibly used in next-generation non-volatile memory application.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improved properties in albumen of duck egg based resistive switching memory by doping with Fe Ions\",\"authors\":\"Chun-Chieh Lin, Chang-Chih Chung, Kuan-Jhih Hou, T. Tseng\",\"doi\":\"10.1109/ISNE.2016.7543291\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Albumen of duck egg based, an environmentally friendly material, resistive switching memory is proposed in this work. The resistive switching properties of the device are improved by doping with Fe ions. The non-volatility of the device is demonstrated. A possible resistive switching filamentary model is proposed. The proposed memory device is possibly used in next-generation non-volatile memory application.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543291\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543291","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improved properties in albumen of duck egg based resistive switching memory by doping with Fe Ions
Albumen of duck egg based, an environmentally friendly material, resistive switching memory is proposed in this work. The resistive switching properties of the device are improved by doping with Fe ions. The non-volatility of the device is demonstrated. A possible resistive switching filamentary model is proposed. The proposed memory device is possibly used in next-generation non-volatile memory application.