三栅MOSFET与双栅MOSFET的分析建模与比较

2013 International Conference on Control, Computing, Communication and Materials (ICCCCM) Pub Date : 2013-10-31 DOI:10.1109/ICCCCM.2013.6648901

S. P. Pandey, R. Kushwah, Shyam Babu Singh, S. Akashe

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引用次数: 7

摘要

在本文中，我们引入了对称三栅(TG) MOSFET的不可比拟的修改特性。与双栅(DG) MOSFET模型相比，改进的三栅(TG) MOSFET结构减少了短沟道效应(SCEs)。计算了阈值电压、漏极势垒降低(DIBL)和表面电位。我们还将讨论跨导、漏极电流和漏极电导的模型。与双栅极(DG) MOSFET相比，所提出的三栅极(TG)结构增加了跨导和漏极电流，减小了短通道效应(SCEs)、电场和漏极电导。

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Analytical modeling and comparison of Triple gate MOSFET with Double gate MOSFET

In this paper, we bring in the incomparable features of modification in symmetrical Triple-gate (TG) MOSFET. The modified structure of Triple gate (TG) MOSFET reduces short-channel effects (SCEs) in comparison of the Double-gate (DG) MOSFET model. The threshold voltage, the drain-induced barrier lowering (DIBL) and surface potential are calculated. We will also discuss a model for the trans-conductance, drain current and drain conductance. The proposed Triple-gate (TG) structure province increase in the trans-conductance and drain current and reduces the short-channel effects (SCEs), electric field and drain conductance and in comparison of the Double-gate (DG) MOSFET.

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来源期刊

2013 International Conference on Control, Computing, Communication and Materials (ICCCCM)

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