具有温度检测电路的低功耗自刷新模式DRAM

Symposium 1993 on VLSI Circuits Pub Date : 1993-05-19 DOI:10.1109/VLSIC.1993.920531

Y. Kagenishi, H. Hirano, A. Shibayama, H. Kotani, N. Moriwaki, M. Kojima, T. Sumi

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引用次数: 24

摘要

为了减小自刷新模式电流，设计了温度检测电路、反偏置发生器和降压变换器。利用这些电路在16M DRAM中，在Vcc=5V, Ta=25 /spl度/C时实现了33 /spl mu/ a的自刷新模式消耗电流。

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Low power self refresh mode DRAM with temperature detecting circuit

To reduce self refresh mode current, a temperature detecting circuit, back bias generator and voltage down convertor, are developed. Using these circuits in a 16M DRAM, 33 /spl mu/A consuming current in self refresh mode has been realized at Vcc=5V, Ta=25 /spl deg/C.

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Symposium 1993 on VLSI Circuits

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