Sn-Bi-In-Ga四元低温钎料的研制

Chih-han Yang, Shiqi Zhou, S. Lin, H. Nishikawa
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引用次数: 2

摘要

随着电子器件的小型化和高密度化,近年来电子封装技术得到了长足的发展。为了消除封装模块中材料CTE(热膨胀系数)失配造成的热损伤,电子行业需要低成本、高可靠性的低温无铅焊料。共晶Sn-58Bi具有较高的抗拉强度和较低的熔点(139℃),引起了业界的广泛关注。然而,富bi相的脆性是采用Sn-58Bi焊料的一个重要问题。因此,目标是设计合适的合金元素,以提高Sn-58Bi焊料的延伸率,同时保持较低的熔化温度。在文献中发现,少量的铟(In)掺杂可以显著提高Sn-58Bi焊料的延伸率;但是过量的in掺杂会形成脆性的BiIn金属间化合物(IMC)。此外,根据我们之前的研究,少量镓(Ga)掺杂到Sn-Bi焊料中可以有效抑制界面IMC生长1。本研究利用PANDAT软件进行calphad型热力学计算,并进行相应的关键实验,设计Sn-Bi-In-Ga (SBIG)四元低温钎料。基于杠杆规则和Scheil模型计算的凝固路径设计了Sn-Bi-In三元组分的理想组成范围,在回流和凝固过程中不形成脆性IMC。设计的Sn-Bi- in -Ga (SBIG)四元低温焊料由初生(Sn)相、(Sn)+(Bi)共晶组织和少量未反应的过量Ga组成,并在阶梯淬火实验中进一步验证了凝固的步骤。此外,不同冷却速率对内压温度的出现也有很大的影响。由于初生(Sn)相在较低的冷却速率(如炉内冷却)下凝固更彻底,形成了富BiIn液体,容易观察到BiIn IMC。空冷后SBIG焊料的力学性能与传统Sn-58Bi焊料相比,具有较高的屈服强度、抗拉极限强度和伸长率。断口表面呈韧窝状,为韧性断裂。基于计算热力学,提出了一种具有良好力学性能的低温无铅Sn-Bi-In-Ga四元钎料,并进行了实验验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of Sn-Bi-In-Ga quaternary low-temperature solders
With the miniaturization and high density of electronic devices, the development of electronic packaging technologies has grown significantly in recent years. In order to eliminate thermal damages of the CTE (Coefficient of thermal expansion) mismatches of materials in packaging modules, low-temperature lead (Pb)-free solders with low cost and high reliability are in demand in the electronic industry. Eutectic Sn-58Bi with high tensile strength and low melting temperature at 139 °C has caught great concerns in the industry. However, the brittle nature of the Bi-rich phase is a significant issue in employing the Sn-58Bi solder. Therefore, the goal is to design proper alloying elements for improving the elongation of the Sn-58Bi solder, while keeping their low melting temperatures. In the literature, it has been found that minor indium (In)-doping can substantially improve the elongation of Sn-58Bi solder; however, the excess amount of In-doping would lead to the formation of brittle BiIn intermetallic compound (IMC). In addition, according to our previous study, minor gallium (Ga) doping into the Sn-Bi solder can effectively suppress the interfacial IMC growth1. In this study, CALPHAD-type thermodynamic calculations using the PANDAT software and corresponding key experiments were performed to design the Sn-Bi-In-Ga (SBIG) quaternary low-temperature solders. Calculated solidification paths based on the lever rule and the Scheil model were employed to design the desired compositional range of the Sn-Bi-In ternary constituents, without the formation of brittle IMC during reflow and solidification processes. The designed Sn-Bi-In-Ga (SBIG) quaternary low-temperature solder is composed of the primary (Sn) phase, the (Sn)+(Bi) eutectic structure and little amount of unreacted excess Ga and the steps of solidification were furtherly verified in the step quenching experiment. Moreover, the different cooling rate made a great influence on the IMC appearing. Because the primary (Sn) phase was solidified more completely with the lower cooling rate such as furnace cooling, BiIn-rich liquid was formed, and the BiIn IMC was easily observed. As for the mechanical properties of the SBIG solder after air cooling, high yield strength, high ultimate tensile strength, and a much better elongation than the conventional Sn-58Bi solder were obtained. Dimple-like morphology was observed in the fracture surface, indicating a ductile fracture. A new low-temperature Pb-free Sn-Bi-In-Ga quaternary solder with good mechanical properties is proposed based on computational thermodynamics and validated in experiments.
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