多量子阱结构中基于子带间三阶非线性的10.6 μm相位共轭

I. Gravé, M. Segev, A. Yariv
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引用次数: 0

摘要

半导体多量子阱(MQW)子带中的非线性光学效应及其应用研究是当前研究的热点。不同的研究小组观察到,与块状材料相比,二阶非线性大大增强。最近研究了三阶非线性效应:通过DC Kerr效应(1),观察到体积值上非常大的增强比,并使用四波混合方案(2)来测量大的χ(3),所有这些都在GaAs/AlGaAs超晶格中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Phase conjugation at 10.6 μm via intersubband third order nonlinearities in multi quantum well structures
The study of nonlinear optical effects in semiconductor multi quantum well (MQW) subbands and the related applications is a subject of current interest. Greatly enhanced second order nonlinearities, as compared to those in bulk materials, have been observed by different groups. Recently third order nonlinear effects were probed: via the DC Kerr effect(1), where very large enhancement ratios over bulk values were observed, and using a four wave mixing scheme(2) to measure a large χ(3), all in GaAs/AlGaAs superlattices.
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