基于galinsta连续可调转比技术的射频硅基cmos兼容MEMS可变电磁微流控电感器

Fatemeh Banitorfian, F. Eshghabadi, Asrulnizam Abd Manaf, N. Noh, M. T. Mustaffa
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引用次数: 2

摘要

本文提出了一种谐振频率超过8ghz的连续可变MEMS电磁电感器。该电感器在可重构射频电路器件中具有共振调节的高调谐能力。为了实现这一目标,设计了一个通道,通过注入导电液体(这里是Galinstan)绕过线圈的匝数。一旦匝数减少,电感值根据注入水平下降。采用全波三维电磁分析工具HFSS对不同导液注入水平的硅衬底铜线圈的电磁电感进行了仿真。除了具有成本效益和易于制造的特点外,仿真结果还证明了150%的调谐范围。仿真结果表明,该电感在3ghz时的最大质量因数为85。低电阻硅在4ghz时的最小和最大电感值分别为1.5和4nh。该可调谐电感器可应用于可重构射频电路和匹配网络中,以调谐系统的工作频率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Radio-frequency silicon-based CMOS-compatible MEMS variable solenoid micro-fluidic inductor with Galinstan-based continuously-adjustable turn-ratio technique
This paper proposes a continuously-variable MEMS solenoid inductor with resonating frequency of over 8 GHz. This inductor allows high-tuning capability for resonance adjustment purpose in reconfigurable radio-frequency circuit devices. To achieve this goal, a channel is contrived to bypass the turns of the coil through the injection of a conductive liquid (here, Galinstan). Once the number of turns decreases, the inductance value falls according to the injection level. The proposed solenoid inductor is simulated using a full-wave three-dimensional electromagnetic analysis tool, HFSS, for silicon substrate with copper metallic coil for different level of conductive liquid injection. Beside the cost-effective and easy manufacturing process, the simulation results demonstrate the 150% tuning range. The EM simulation results show a maximum quality factor of 85 at 3 GHz for proposed inductor. The minimum and maximum inductance values are 1.5 and 4 nH at 4 GHz for low-resistivity Silicon. This tunable inductor can be applied into reconfigurable radio-frequency circuits and matching networks to tune the operating frequency of the system.
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