D. Edelstein, C. Davis, L. Clevenger, M. Yoon, A. Cowley, T. Nogami, H. Rathore, B. Agarwala, S. Arai, A. Carbone, K. Chanda, S. Cohen, W. Cote, M. Cullinan, T. Dalton, S. Das, P. Davis, J. Demarest, D. Dunn, C. Dziobkowski, R. Filippi, J. Fitzsimmons, P. Flaitz, S. Gates, J. Gill, A. Grill, D. Hawken, K. Ida, D. Klaus, N. Klymko, M. Lane, S. Lane, J. Lee, W. Landers, W.-K. Li, Y. Lin, E. Liniger, X. Liu, A. Madan, S. Malhotra, J. Martin, S. Molis, C. Muzzy, D. Nguyen, S. Nguyen, M. Ono, C. Parks, D. Questad, D. Restaino, A. Sakamoto, T. Shaw, Y. Shimooka, A. Simon, E. Simonyi, S. Tempest, T. Van Kleeck, S. Vogt, Y. Wang, W. Wille, J. Wright, C. Yang, T. Ivers
{"title":"90nm SOI/Cu/SiCOH技术的可靠性、产率和性能","authors":"D. Edelstein, C. Davis, L. Clevenger, M. Yoon, A. Cowley, T. Nogami, H. Rathore, B. Agarwala, S. Arai, A. Carbone, K. Chanda, S. Cohen, W. Cote, M. Cullinan, T. Dalton, S. Das, P. Davis, J. Demarest, D. Dunn, C. Dziobkowski, R. Filippi, J. Fitzsimmons, P. Flaitz, S. Gates, J. Gill, A. Grill, D. Hawken, K. Ida, D. Klaus, N. Klymko, M. Lane, S. Lane, J. Lee, W. Landers, W.-K. Li, Y. Lin, E. Liniger, X. Liu, A. Madan, S. Malhotra, J. Martin, S. Molis, C. Muzzy, D. Nguyen, S. Nguyen, M. Ono, C. Parks, D. Questad, D. Restaino, A. Sakamoto, T. Shaw, Y. Shimooka, A. Simon, E. Simonyi, S. Tempest, T. Van Kleeck, S. Vogt, Y. Wang, W. Wille, J. Wright, C. Yang, T. Ivers","doi":"10.1109/IITC.2004.1345750","DOIUrl":null,"url":null,"abstract":"We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-k interconnect BEOL. Significant material and integration engineering have led to the highest reliability, without degrading the performance expected from low-k. Results are presented on every aspect of BEOL and chip-package reliability, yields, low-k film parameters, BEOL capacitances and circuit delays on functional chips. All results meet or exceed our concurrent 90 nm Cu/FTEOS technology, and support extendibility to 65 nm.","PeriodicalId":148010,"journal":{"name":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","volume":"41 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology\",\"authors\":\"D. Edelstein, C. Davis, L. Clevenger, M. Yoon, A. Cowley, T. Nogami, H. Rathore, B. Agarwala, S. Arai, A. Carbone, K. Chanda, S. Cohen, W. Cote, M. Cullinan, T. Dalton, S. Das, P. Davis, J. Demarest, D. Dunn, C. Dziobkowski, R. Filippi, J. Fitzsimmons, P. Flaitz, S. Gates, J. Gill, A. Grill, D. Hawken, K. Ida, D. Klaus, N. Klymko, M. Lane, S. Lane, J. Lee, W. Landers, W.-K. Li, Y. Lin, E. Liniger, X. Liu, A. Madan, S. Malhotra, J. Martin, S. Molis, C. Muzzy, D. Nguyen, S. Nguyen, M. Ono, C. Parks, D. Questad, D. Restaino, A. Sakamoto, T. Shaw, Y. Shimooka, A. Simon, E. Simonyi, S. Tempest, T. Van Kleeck, S. Vogt, Y. Wang, W. Wille, J. Wright, C. Yang, T. Ivers\",\"doi\":\"10.1109/IITC.2004.1345750\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-k interconnect BEOL. Significant material and integration engineering have led to the highest reliability, without degrading the performance expected from low-k. Results are presented on every aspect of BEOL and chip-package reliability, yields, low-k film parameters, BEOL capacitances and circuit delays on functional chips. All results meet or exceed our concurrent 90 nm Cu/FTEOS technology, and support extendibility to 65 nm.\",\"PeriodicalId\":148010,\"journal\":{\"name\":\"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)\",\"volume\":\"41 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2004.1345750\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2004.1345750","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology
We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-k interconnect BEOL. Significant material and integration engineering have led to the highest reliability, without degrading the performance expected from low-k. Results are presented on every aspect of BEOL and chip-package reliability, yields, low-k film parameters, BEOL capacitances and circuit delays on functional chips. All results meet or exceed our concurrent 90 nm Cu/FTEOS technology, and support extendibility to 65 nm.
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