{"title":"高频大功率静电感应晶体管","authors":"M. Tatsuta, E. Yamanaka, J. Nishizawa","doi":"10.1109/IAS.1993.299113","DOIUrl":null,"url":null,"abstract":"The characteristics, physical construction, and application of a newly commercialized high-frequency SIT (static induction transistor) are discussed. The main features of this device are a lowering in the gate-to-source and gate-to-drain capacitances, and an increase in the breakdown voltage and power rating. These enhancements were brought about as a result of the introduction of new and refined manufacturing technologies. This SIT device is currently being applied in applications such as medium-wavelength radio transmitters and induction heaters.<<ETX>>","PeriodicalId":345027,"journal":{"name":"Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting","volume":"abs/2206.00369 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High frequency-high power static induction transistor\",\"authors\":\"M. Tatsuta, E. Yamanaka, J. Nishizawa\",\"doi\":\"10.1109/IAS.1993.299113\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The characteristics, physical construction, and application of a newly commercialized high-frequency SIT (static induction transistor) are discussed. The main features of this device are a lowering in the gate-to-source and gate-to-drain capacitances, and an increase in the breakdown voltage and power rating. These enhancements were brought about as a result of the introduction of new and refined manufacturing technologies. This SIT device is currently being applied in applications such as medium-wavelength radio transmitters and induction heaters.<<ETX>>\",\"PeriodicalId\":345027,\"journal\":{\"name\":\"Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting\",\"volume\":\"abs/2206.00369 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IAS.1993.299113\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.1993.299113","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High frequency-high power static induction transistor
The characteristics, physical construction, and application of a newly commercialized high-frequency SIT (static induction transistor) are discussed. The main features of this device are a lowering in the gate-to-source and gate-to-drain capacitances, and an increase in the breakdown voltage and power rating. These enhancements were brought about as a result of the introduction of new and refined manufacturing technologies. This SIT device is currently being applied in applications such as medium-wavelength radio transmitters and induction heaters.<>