一种0.35μm CMOS sub-1V低静态电流低压降稳压器

Yuh-Shyan Hwang, Ming-Shian Lin, Bo-Han Hwang, Jiann-Jong Chen
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引用次数: 30

摘要

本文介绍了一种低电压103na的低静态电流低于1v的CMOS低压降(LDO)稳压器。所提出的LDO采用数字误差放大器,使其静态电流比其他采用传统误差放大器的LDO低。此外,即使没有输出电容,LDO也可以保持稳定。电源为0.9 V,输出电压设计为0.5 V。LDO的最大输出电流为50ma,输出电压为0.5 V。LDO的原型是用TSMC 0.35 mum CMOS工艺制作的。无衬垫的有效面积仅为240 μ m乘以400 μ m。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.35μm CMOS sub-1V low-quiescent-current low-dropout regulator
A sub-1 V CMOS low-dropout (LDO) voltage regulator with 103 nA low-quiescent current is presented in this paper. The proposed LDO uses a digital error amplifier that can make the quiescent current lower than other LDOs with the traditional error amplifier. Besides, the LDO can be stable even without the output capacitor. With a 0.9 V power supply, the output voltage is designed as 0.5 V. The maximum output current of the LDO is 50 mA at an output of 0.5 V. The prototype of the LDO is fabricated with TSMC 0.35 mum CMOS processes. The active area without pads is only 240 mum times 400 mum.
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