sic - mosfet的最新进展及其未来与最先进Si-IGBT的竞争

2019 International Conference on Electronics Packaging (ICEP) Pub Date : 2019-04-17 DOI:10.23919/ICEP.2019.8733597

N. Iwamuro

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引用次数: 5

摘要

SiC MOSFET器件是许多功率转换系统中下一代功率半导体器件结构的首选器件之一。由于整个应用系统对稳定性的要求很高，因此探索具有极低导通电阻和更高可靠性的SiC mosfet的优化结构和操作是非常必要的。本文综述了近年来碳化硅mosfet的器件技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Recent Progress of SiC-MOSFETs and Their Futures-Competion with state-of-the-art Si-IGBT-

SiC MOSFET device is a one of superior candidates as next power semiconductor device structure for many power transform systems. Owing to high requirement of stability for the whole application systems, it is essential to explore the optimized structures and operations for SiC MOSFETs with not only the extremely low on resistance but also much higher reliability. In this paper, an overview on recent device technologies of SiC MOSFETs is introduced.

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2019 International Conference on Electronics Packaging (ICEP)

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