C. Viegas, Hairui Liu, J. Powell, H. Sanghera, Andrew Whimster, Lynn Donoghue, P. Huggard, B. Alderman
{"title":"大功率倍频源","authors":"C. Viegas, Hairui Liu, J. Powell, H. Sanghera, Andrew Whimster, Lynn Donoghue, P. Huggard, B. Alderman","doi":"10.1109/IMaRC.2018.8877307","DOIUrl":null,"url":null,"abstract":"This paper describes the recent results obtained from high-power frequency multiplied sources typically using integrated GaAs Schottky diode circuits. The results show that a single GaAs circuit can safely handle 500 mW input power, while generating more than 150 mW in a power-combined configuration for a doubler and about 25 mW for a tripler. The discussion will mainly focus on millimeter-wave frequency doublers and triplers between 160 and 345 GHz.","PeriodicalId":201571,"journal":{"name":"2018 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-Power Frequency Multiplied Sources\",\"authors\":\"C. Viegas, Hairui Liu, J. Powell, H. Sanghera, Andrew Whimster, Lynn Donoghue, P. Huggard, B. Alderman\",\"doi\":\"10.1109/IMaRC.2018.8877307\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the recent results obtained from high-power frequency multiplied sources typically using integrated GaAs Schottky diode circuits. The results show that a single GaAs circuit can safely handle 500 mW input power, while generating more than 150 mW in a power-combined configuration for a doubler and about 25 mW for a tripler. The discussion will mainly focus on millimeter-wave frequency doublers and triplers between 160 and 345 GHz.\",\"PeriodicalId\":201571,\"journal\":{\"name\":\"2018 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMaRC.2018.8877307\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE MTT-S International Microwave and RF Conference (IMaRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMaRC.2018.8877307","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper describes the recent results obtained from high-power frequency multiplied sources typically using integrated GaAs Schottky diode circuits. The results show that a single GaAs circuit can safely handle 500 mW input power, while generating more than 150 mW in a power-combined configuration for a doubler and about 25 mW for a tripler. The discussion will mainly focus on millimeter-wave frequency doublers and triplers between 160 and 345 GHz.
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