利用InAlGaN势垒降低InAlGaN基UV发光二极管的效率下降

16th Opto-Electronics and Communications Conference Pub Date : 2011-07-04 DOI:10.1117/12.912226

C. Chiu, P. Tu, Chun-Yen Chang, Shih-Cheng Huang, Jet-Rung Chang, H. Zan, H. Kuo, Chih-Peng Hsu

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引用次数: 2

摘要

在高注入电流下，具有较好的带偏比和较高的载流子迁移率，具有较高的辐射复合率和较低的效率下降。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier

The UV LEDs with quaternary InAlGaN barrier exhibit higher radiative recombination rate and low efficiency droop at a high injection current because of the better band-offset ratio and the higher carrier mobility.

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来源期刊

16th Opto-Electronics and Communications Conference

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