{"title":"不同氦气流量下纳米束束技术合成共掺杂ZnO稀释磁性半导体薄膜","authors":"Xuehua Li, Zhiwei Zhao","doi":"10.1109/IVEC.2015.7223976","DOIUrl":null,"url":null,"abstract":"Co-doped ZnO thin films were fabricated by nanocluster-beam technique with different flow rates of helium gas at 200, 100 and 50 sccm and its influence of different flow rates on the properties has been investigated. TEM and AFM images, XPS survey scan and UV absorbance spectra were carried out. Co-doped ZnO exhibited ferromagnetic at room temperature, and the saturation magnetization of films reduced from 16 to 9.4μemu as the increase of flow rats.","PeriodicalId":435469,"journal":{"name":"2015 IEEE International Vacuum Electronics Conference (IVEC)","volume":"64 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthesis of Co-doped ZnO diluted magnetic semiconductors thin films by nanocluster-beam technique at different flow rate of helium gas\",\"authors\":\"Xuehua Li, Zhiwei Zhao\",\"doi\":\"10.1109/IVEC.2015.7223976\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Co-doped ZnO thin films were fabricated by nanocluster-beam technique with different flow rates of helium gas at 200, 100 and 50 sccm and its influence of different flow rates on the properties has been investigated. TEM and AFM images, XPS survey scan and UV absorbance spectra were carried out. Co-doped ZnO exhibited ferromagnetic at room temperature, and the saturation magnetization of films reduced from 16 to 9.4μemu as the increase of flow rats.\",\"PeriodicalId\":435469,\"journal\":{\"name\":\"2015 IEEE International Vacuum Electronics Conference (IVEC)\",\"volume\":\"64 6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-04-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Vacuum Electronics Conference (IVEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVEC.2015.7223976\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Vacuum Electronics Conference (IVEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVEC.2015.7223976","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Synthesis of Co-doped ZnO diluted magnetic semiconductors thin films by nanocluster-beam technique at different flow rate of helium gas
Co-doped ZnO thin films were fabricated by nanocluster-beam technique with different flow rates of helium gas at 200, 100 and 50 sccm and its influence of different flow rates on the properties has been investigated. TEM and AFM images, XPS survey scan and UV absorbance spectra were carried out. Co-doped ZnO exhibited ferromagnetic at room temperature, and the saturation magnetization of films reduced from 16 to 9.4μemu as the increase of flow rats.
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