大型斜向fed碳纳米管阴极的激光表面处理

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354997

W. Rochanachirapar, K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai, A. Hosono, S. Okuda

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引用次数: 0

摘要

高功率激光条纹束辐照是大斜向碳纳米管阴极表面处理的关键技术。采用丝网印刷的方法在ITO/玻璃衬底上制备了碳纳米管阴极。用KrF (248 nm)和XeCl (308 nm)准分子激光照射丝网印刷的碳纳米管阴极。斑点形状调整为8/spl次/ 8mm /sup 2/的斑点或200/spl次/0.4 mm/sup 2/的条纹。采用0.2、0.3、0.4、0.5、0.8 mm步长辐照条纹光束。在压力为10- 5pa的真空室中测量了发射特性。用CCD相机观察了荧光粉屏上的发射模式。导通场为最小，阶跃为0.5 mm。在2.5 V//spl mu/m的电场下，KrF激光的导通场低至0.7 V//spl mu/m，发射密度高达1.5 mA/cm/sup / 2。

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Laser surface treatment of CNT cathodes for large diagonal FEDs

High power laser irradiation with a stripe beam is the key technology for large diagonal carbon nanotube (CNT) cathode surface treatment. CNT cathodes were fabricated on ITO/glass substrates by screen-printing with conventional organic binder. Screen-printed CNT cathodes were irradiated by KrF (248 nm) and XeCl (308 nm) excimer lasers. The spot shape was adjusted as a spot of 8/spl times/8 mm/sup 2/ or a stripe of 200/spl times/0.4 mm/sup 2/. The stripe beam was irradiated in a step of 0.2, 0.3, 0.4, 0.5 and 0.8 mm. The emission characteristics were measured in a vacuum chamber with a pressure of 10-5 Pa. The emission patterns on a phosphor screen were observed by a CCD camera. The turn-on-field became the lowest with a step of 0.5 mm. The turn-on-field became as low as 0.7 V//spl mu/m and the emission density became as high as 1.5 mA/cm/sup 2/ at a field of 2.5 V//spl mu/m by KrF laser irradiation.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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