提高大型集成电路供电电流测试的分辨率

Y. Malaiya, A. Jayasumana, C. Tong, S. Menon
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引用次数: 30

摘要

静态CMOS VLSI集成电路在静态期间所产生的电流非常小,通常为纳安培数量级。然而,它非常容易受到许多失效模式的影响。这种集成电路中存在的许多故障导致静态电源电流(IDDQ)增加几个数量级。其中一些故障可能不会表现为逻辑故障,并且无法通过传统的IC测试技术检测到。在大型集成电路中,可能很难区分由于缺陷导致的较大IDDQ和由于正常参数变化导致的较高IDDQ。提出了这个问题的统计特征。这可以用来确定分区的最佳大小。提出了一种新的信息压缩方案,可以显著提高分辨率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Enhancement of resolution in supply current based testing for large ICs
Current drawn by a static CMOS VLSI integrated circuit during quiescent periods is extremely small and is normally of the order of nanoamperes. However, it is remarkably susceptible to a number of failure modes. Many faults present in such ICs cause the quiescent power-supply current (IDDQ) to increase by several orders of magnitude. Some of these faults may not manifest as logical faults, and would not be detected by traditional IC test techniques. In large ICs, it may be hard to distinguish between larger IDDQ due to defects and elevated IDDQ due to normal parameter variations. A statistical characterisation of the problem is presented. This can be used to determine the optimal size of partitions. A new information compression scheme is presented which can significantly enhance resolution.<>
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