纳米级器件的安全原语设计:电阻式RAM的案例研究

Robert Karam, Rui Liu, Pai-Yu Chen, Shimeng Yu, S. Bhunia
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引用次数: 11

摘要

在新兴的非易失性存储器(nvm)中,固有的随机物理机制,如电阻性随机存取存储器(RRAM),最近被探索用于硬件安全应用。与传统的硅物理不可克隆函数(puf)完全基于制造工艺的变化不同,RRAM在其物理机制中具有一些内在的随机性,可以作为熵源;例如,电阻变化、随机电报噪声和概率开关行为。本文回顾了用新兴设备构建安全原语的挑战和机遇。重点介绍了基于随机存储器的硬件安全原语的研究进展,包括PUF和真随机数生成器(TRNG)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Security primitive design with nanoscale devices: A case study with resistive RAM
Inherent stochastic physical mechanisms in emerging nonvolatile memories (NVMs), such as resistive random-access-memory (RRAM), have recently been explored for hardware security applications. Unlike the conventional silicon Physical Unclonable Functions (PUFs) that are solely based on manufacturing process variation, RRAM has some intrinsic randomness in its physical mechanisms that can be utilized as entropy sources; for instance, resistance variation, random telegraph noise, and probabilistic switching behaviors. This paper reviews the challenges and opportunities in building security primitives with emerging devices. In particular, it presents research progress of RRAM-based hardware security primitives, including PUF and True Random Number Generator (TRNG).
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