用Pb(Mn,Nb)O3-Pb(Zr,Ti)O3溅射薄膜制备高性能4ghz FBAR

2010 IEEE International Frequency Control Symposium Pub Date : 2010-06-01 DOI:10.1109/FREQ.2010.5556334

T. Matsushima, N. Yamauchi, T. Shirai, T. Yoshihara, Y. Hayasaki, T. Ueda, I. Kanno, K. Wasa, H. Kotera

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引用次数: 3

摘要

采用溅射Pb(Mn,Nb)O3-Pb(Zr,Ti)O3 (PMnN-PZT)薄膜制备了4ghz薄膜谐振器。在(100)MgO衬底上沉积了PMnN-PZT薄膜。薄膜具有四边形晶体结构和高(001)取向。采用MEMS技术制备了由PMnN-PZT薄膜组成的薄膜体声谐振器(FBAR)。利用矢量网络分析仪(VNA)对谐振器的射频特性进行了评价。在4.17GHz下，PMnN-PZT薄膜的机电耦合常数kt和q值分别为0.7和157。与先前报道的PZT-BAW谐振器相比，溅射薄膜获得的这些值是最高的。

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High performance 4 GHz FBAR prepared by Pb(Mn,Nb)O3-Pb(Zr,Ti)O3 sputtered thin films

The 4 GHz film resontors have been fabricated by sputtered Pb(Mn,Nb)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin films. The PMnN-PZT thin films were deposited on (100)MgO substrates. The thin films showed tetragonal crystal structure and highly (001) orientation. The film bulk acoustic resonators (FBAR) composed by PMnN-PZT thin films were fabricated by MEMS technology. RF properties of the resonator were evaluated by VNA (Vector Network Analyzer). The electro-mechanical coupling constant kt and Q-value for PMnN-PZT thin films were 0.7 and 157, at 4.17GHz, respectively. These values obtained by sputtered thin films are highest comparing with those of previously reported PZT-BAW resonators.

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2010 IEEE International Frequency Control Symposium

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